unisonic technologies co., ltd mmbt9014 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r206-022,e pre-amplifier, low level & low noise ? features * high total power dissipation. (450mw) * excellent h fe linearity. * complementary to utc mmbt9015 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 MMBT9014G-X-AE3-R MMBT9014G-X-AE3-R sot-23 e b c tape reel ? marking
mmbt9014 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r206-022,e ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit collector-emitter voltage v ceo 45 v collector-base voltage v cbo 50 v emitter base voltage v ebo 5 v collector current i c 100 ma collector dissipation p c 225 mw junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-emitter voltage v ceo i c =100 a, i e =0 50 v collector-base voltage v cbo i c =1ma, i b =0 45 v emitter base voltage v ebo i e =100 a, i c =0 5 v collector cutoff current i cbo v cb =50v, i e =0 50 na emitter cutoff current i ebo v eb =5v, i c =0 100 na dc current gain h fe v ce =5v,ic=1ma 60 280 1000 collector-emitter satu ration voltage v ce ( sat ) i c =100ma, i b =5ma 0.14 0.3 v base-emitter satura tion voltage v be ( sat ) i c =100ma, i b =5ma 0.84 1.0 v base-emitter on voltage v be ( on ) v ce =5v, i c =2ma 0.58 0.63 0.7 v current-gain-bandwidth product f t v ce =5v, i c =10ma 150 270 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 2.2 3.5 pf noise figure nf v ce =5v,i c =0.2ma,f=1khz,r s =2k 0.9 10 db ? classification of h fe rank a b c d range 60-150 100-300 200-600 400-1000
mmbt9014 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r206-022,e ? typical characteristics 010 20 30 40 50 0 10 20 30 40 50 60 70 80 90 100 dc current gain static characteristic collect-emitter voltage, v ce (v) base-emitter saturation voltage collecter saturation voltage collector current, i c (ma) collector current, i c (ma) current gain-bandwidth product 110 100 1000 10 50 100 500 1000 1 10 100 1000 50 100 500 1000 10 v ce =5v v ce =5v i b =160 a i b =140 a i b =120 a i b =100 a i b =80 a i b =60 a i b =40 a i b =20 a 1 10 100 1000 10 50 100 500 1000 i c =20i b v be(sat) v ce(sat) saturation voltage, v be(sat) v ce(sat) (mv) current gain-bandwidth product, f t (mhz) collector current, i c (ma) collector current, i c (ma) dc current gain, h fe utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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